sf1200, sf1600 www.vishay.com vishay semiconductors rev. 1.8, 11-sep-12 1 document number: 86059 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast avalanche sinterglass diode mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? very low switching losses ? glass passivated ? high reverse voltage ? hermetically sealed axial-leaded glass envelope ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? switched mode power supplies ? high-frequency inverter circuits ? ? ? ? 949539 ordering information (example) device name ordering code tape d units minimum order quantity sf1600 sf1600-tr 5000 per 10" tape and reel 25 000 sf1600 SF1600-TAP 5000 per ammopack 25 000 parts table part type differentiation package sf1200 v r = 1200 v; i f(av) = 1 a sod-57 sf1600 v r = 1600 v; i f(av) = 1 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics sf1200 v r = v rrm 1200 v sf1600 v r = v rrm 1600 v peak forward surge current t p = 10 ms, half sine wave i fsm 30 a average forward current half sine wave, v r = v rrm , r thja = 45 k/w i f(av) 1a max. pulse energy in avalanche mode, non repetitive (inductive load switch off i (br)r = 400 ma, inductive load e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w
sf1200, sf1600 www.vishay.com vishay semiconductors rev. 1.8, 11-sep-12 2 document number: 86059 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) ? ? fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature fig. 3 - reverse current vs. junction temperature fig. 4 - max. reverse power dissipation vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a v f --3.4v reverse current v r = v rrm i r --5a v r = v rrm , t j = 125 c i r - - 50 a reverse breakdown voltage l r = 100 a sf1200 v (br)r 1250 - - v sf1600 v (br)r 1650 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 75 ns 0.001 0.01 0.1 1 10 100 16463 012 4 5 69 78 3 v f - forwar d volta g e (v) i f - forwar d current (a) t j = 175 c t j = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 15789 0 20 40 80 100 120 180 140 160 60 v r = v rrm half s ine wave r thja = 100 k/w pcb: d = 25 mm r thja = 45 k/w l = 10 mm i fav - avera g e forwar d current (a) t amb - ambient temperature (c) 1 10 100 1000 2 0 100 12 10 1 16464 v r = v rrm i r - reverse current (a) t j - junction temperature (c) 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 16465 p r - reverse power dissipation (mw) t j - junction temperature (c) p r - limit at 100 % v r v r = v rrm p r - limit at 80 % v r
sf1200, sf1600 www.vishay.com vishay semiconductors rev. 1.8, 11-sep-12 3 document number: 86059 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 16466 f = 1 mhz v r - reverse volta g e (v) c d - dio d e capacitance (pf) 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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